Effect of RF Sputtered on Characterization of SrTiO3 Thin Film
نویسندگان
چکیده
Thin films of SrTiO3 (STO) were formed on p-type Si(100) substrates using rf magnetron sputtering at different substrate temperatures. The structural and electrical properties investigated. thickness the was between 300 500 nm, temperature always 550°C. XRD pattern shows cubic phase for thin film. Using capacitance-voltage, current-voltage, admittance spectroscopy, metal-insulator-semiconductor (Al/STO/p- Si/Al) structures fabricated characterized. dielectric constant decreased with increasing frequency. impedance
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ژورنال
عنوان ژورنال: International Journal of Thin Films Science and Technology (Online)
سال: 2023
ISSN: ['2090-9519', '2090-9527']
DOI: https://doi.org/10.18576/ijtfst/120208